Fabrication of Graphene-Quantum Dot hybrid films for photodetectors

Abstract

Graphene-quantum dot (G-QD) composites for transparent and optoelectronic films were fabricated via hybridization between chemically modified graphene (CMG) and functionalized CdSe/ZnS QDs. Here, we examined the effect of the conductivity of graphene on the phosensitivity of transparent optoelectronic G-QD films from Layer-by-Layer (LBL) techniques. The G-QD hybrid films were characterized optically and electrically by using optical absorption, photoluminescence, 4-point probe and digital multimeter measurements. The scanning electron microscope (SEM), the high-resolution transmission electron microscope (HRTEM) and atomic force microscope (AFM) were used to observe surface morphologies of G-QD films.