Radiation hardened Enclosed N-MOSFET Structure for Radiation Tolerant Application Specific Integrated Circuit
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Lee, Min Soo | - |
| dc.contributor.author | Lee, Hee Chul | - |
| dc.date.accessioned | 2013-03-29T12:53:37Z | - |
| dc.date.available | 2013-03-29T12:53:37Z | - |
| dc.date.created | 2012-07-06 | - |
| dc.date.issued | 2011-12 | - |
| dc.identifier.citation | ICAMD(International Conference on Advanced Materials and Devices), v., no., pp. - | - |
| dc.identifier.uri | http://hdl.handle.net/10203/170836 | - |
| dc.language | ENG | - |
| dc.title | Radiation hardened Enclosed N-MOSFET Structure for Radiation Tolerant Application Specific Integrated Circuit | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.publicationname | ICAMD(International Conference on Advanced Materials and Devices) | - |
| dc.identifier.conferencecountry | South Korea | - |
| dc.contributor.localauthor | Lee, Hee Chul | - |
| dc.contributor.nonIdAuthor | Lee, Min Soo | - |
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