Dramatic increases of dielectric constant Al2O3 by very light doping of La and thermal treatment and its application to flash memory device
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Park, JK | - |
| dc.contributor.author | Lee, Seok-Hee | - |
| dc.contributor.author | Lee, KH | - |
| dc.contributor.author | Pyi, SH | - |
| dc.contributor.author | Cho, Byung Jin | - |
| dc.date.accessioned | 2013-03-29T11:59:59Z | - |
| dc.date.available | 2013-03-29T11:59:59Z | - |
| dc.date.created | 2012-07-08 | - |
| dc.date.issued | 2012-02-17 | - |
| dc.identifier.citation | 제 19회 한국반도체학술대회, v., no., pp. - | - |
| dc.identifier.uri | http://hdl.handle.net/10203/170542 | - |
| dc.language | KOR | - |
| dc.publisher | 고려대학교, 한국반도체산업협회,한국반도체연구조합 | - |
| dc.title | Dramatic increases of dielectric constant Al2O3 by very light doping of La and thermal treatment and its application to flash memory device | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.publicationname | 제 19회 한국반도체학술대회 | - |
| dc.identifier.conferencecountry | South Korea | - |
| dc.contributor.localauthor | Lee, Seok-Hee | - |
| dc.contributor.localauthor | Cho, Byung Jin | - |
| dc.contributor.nonIdAuthor | Park, JK | - |
| dc.contributor.nonIdAuthor | Lee, KH | - |
| dc.contributor.nonIdAuthor | Pyi, SH | - |
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