A 210 nW 29.3 ppm/C 0.7 V Voltage Reference with a Temperature Range of -50 to 130 C in 0.13 um CMOS
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Lee, Junghyup | ko |
| dc.contributor.author | Cho, SeongHwan | ko |
| dc.date.accessioned | 2013-03-29T11:56:49Z | - |
| dc.date.available | 2013-03-29T11:56:49Z | - |
| dc.date.created | 2012-07-16 | - |
| dc.date.created | 2012-07-16 | - |
| dc.date.issued | 2011-06-17 | - |
| dc.identifier.citation | IEEE Symposium on VLSI Circuits, pp.278 - 279 | - |
| dc.identifier.issn | 2158-5601 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/170525 | - |
| dc.language | English | - |
| dc.publisher | IEEE | - |
| dc.title | A 210 nW 29.3 ppm/C 0.7 V Voltage Reference with a Temperature Range of -50 to 130 C in 0.13 um CMOS | - |
| dc.type | Conference | - |
| dc.identifier.scopusid | 2-s2.0-80052675152 | - |
| dc.type.rims | CONF | - |
| dc.citation.beginningpage | 278 | - |
| dc.citation.endingpage | 279 | - |
| dc.citation.publicationname | IEEE Symposium on VLSI Circuits | - |
| dc.identifier.conferencecountry | US | - |
| dc.identifier.conferencelocation | Honolulu | - |
| dc.contributor.localauthor | Cho, SeongHwan | - |
| dc.contributor.nonIdAuthor | Lee, Junghyup | - |
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