A study of controlling workfunctions of TiN and TiAlN metal gates
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Lim, SM | - |
| dc.contributor.author | Kim, C | - |
| dc.contributor.author | Lee, Seok-Hee | - |
| dc.date.accessioned | 2013-03-29T10:55:59Z | - |
| dc.date.available | 2013-03-29T10:55:59Z | - |
| dc.date.created | 2012-07-08 | - |
| dc.date.issued | 2012-06 | - |
| dc.identifier.citation | 12th International Conference on Atomic Layer Deposition, v., no., pp. - | - |
| dc.identifier.uri | http://hdl.handle.net/10203/170227 | - |
| dc.language | ENG | - |
| dc.title | A study of controlling workfunctions of TiN and TiAlN metal gates | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.publicationname | 12th International Conference on Atomic Layer Deposition | - |
| dc.identifier.conferencecountry | Germany | - |
| dc.contributor.localauthor | Lee, Seok-Hee | - |
| dc.contributor.nonIdAuthor | Lim, SM | - |
| dc.contributor.nonIdAuthor | Kim, C | - |
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