Estimation of initial surface potential and modeling of inversion charge for double-gate MOSFET
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 황병운 | - |
| dc.contributor.author | 이창용 | - |
| dc.contributor.author | 이석희 | - |
| dc.contributor.author | 양지운 | - |
| dc.date.accessioned | 2013-03-29T10:48:09Z | - |
| dc.date.available | 2013-03-29T10:48:09Z | - |
| dc.date.created | 2012-07-08 | - |
| dc.date.issued | 2012-02-17 | - |
| dc.identifier.citation | 제19회 한국반도체 학술대회, v., no., pp. - | - |
| dc.identifier.uri | http://hdl.handle.net/10203/170177 | - |
| dc.language | KOR | - |
| dc.publisher | 고려대학교, 한국반도체산업협회, 한국반도체연구조합 | - |
| dc.title | Estimation of initial surface potential and modeling of inversion charge for double-gate MOSFET | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.publicationname | 제19회 한국반도체 학술대회 | - |
| dc.identifier.conferencecountry | South Korea | - |
| dc.contributor.localauthor | 이석희 | - |
| dc.contributor.nonIdAuthor | 황병운 | - |
| dc.contributor.nonIdAuthor | 이창용 | - |
| dc.contributor.nonIdAuthor | 양지운 | - |
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