Dramatic Improvement of high-K Gate Dielectric Reliability by Replacing Metal Gate Electrode with Mono-Layer Graphene
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Park, Jong Kyung | - |
| dc.contributor.author | Song, Seung Min | - |
| dc.contributor.author | Mun, Jeong Hun | - |
| dc.contributor.author | Cho, Byung Jin | - |
| dc.date.accessioned | 2013-03-29T10:29:34Z | - |
| dc.date.available | 2013-03-29T10:29:34Z | - |
| dc.date.created | 2012-07-05 | - |
| dc.date.issued | 2012-06 | - |
| dc.identifier.citation | 2012 Symposium on VLSI Technology, v., no., pp. - | - |
| dc.identifier.uri | http://hdl.handle.net/10203/170073 | - |
| dc.language | ENG | - |
| dc.title | Dramatic Improvement of high-K Gate Dielectric Reliability by Replacing Metal Gate Electrode with Mono-Layer Graphene | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.publicationname | 2012 Symposium on VLSI Technology | - |
| dc.identifier.conferencecountry | United States | - |
| dc.contributor.localauthor | Cho, Byung Jin | - |
| dc.contributor.nonIdAuthor | Park, Jong Kyung | - |
| dc.contributor.nonIdAuthor | Song, Seung Min | - |
| dc.contributor.nonIdAuthor | Mun, Jeong Hun | - |
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