Non-Volatile Memory Device Using Graphene Oxide
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Hong, Seul Ki | ko |
| dc.contributor.author | Cho, Byung Jin | ko |
| dc.date.accessioned | 2013-03-29T10:27:48Z | - |
| dc.date.available | 2013-03-29T10:27:48Z | - |
| dc.date.created | 2012-07-05 | - |
| dc.date.created | 2012-07-05 | - |
| dc.date.issued | 2011-06 | - |
| dc.identifier.citation | 2011 IEEE International NanoElectronics Conference | - |
| dc.identifier.uri | http://hdl.handle.net/10203/170063 | - |
| dc.language | English | - |
| dc.publisher | IEEE | - |
| dc.title | Non-Volatile Memory Device Using Graphene Oxide | - |
| dc.type | Conference | - |
| dc.identifier.scopusid | 2-s2.0-80053038883 | - |
| dc.type.rims | CONF | - |
| dc.citation.publicationname | 2011 IEEE International NanoElectronics Conference | - |
| dc.identifier.conferencecountry | CH | - |
| dc.contributor.localauthor | Cho, Byung Jin | - |
| dc.contributor.nonIdAuthor | Hong, Seul Ki | - |
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