Showing results 1 to 5 of 5
Kinetic Monte Carlo simulation for the striation distribution of void defects in Czochralski silicon growth Lee, Sang Hun; Oh, Hyun Jung; Kim, DoHyun, MOLECULAR SIMULATION, v.36, no.9, pp.663 - 669, 2010-09 |
Kinetic Monte Carlo simulation for the void defects formation in Czochralski silicon growth Lee, Sang Hun; Cho, Hyun Jong; Oh, Hyun Jung; Kim, DoHyun, MOLECULAR SIMULATION, v.36, no.3, pp.240 - 245, 2010-03 |
Molecular dynamics simulation of energetic ion bombardment onto a-Si(3)N(4) surfaces Kim, DH; Kim, DoHyun; Lee, KS, JOURNAL OF CRYSTAL GROWTH, v.230, no.1-2, pp.285 - 290, 2001-08 |
Molecular dynamics simulations of plasma etching processes for microelectronics processing applications = 분자모델링을 이용한 플라즈마 식각공정의 해석link Kim, Dong-Ho; 김동호; et al, 한국과학기술원, 2002 |
Plasma sputtering of silicon dioxide substrate by low energy Ar ion bombardment: molecular dynamics simulation Kim, DH; Lee, SY; Kim, DoHyun, JOURNAL OF CRYSTAL GROWTH, v.237, pp.217 - 222, 2002-04 |
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