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1
Development of high-performance p-type tellurium thin film transistors (TFTs) via vapor phase deposited polymer passivation = 기상 증착 고분자 패시베이션 층 도입을 통한 고성능 p-type 텔루륨 박막 트랜지스터 개발link

Lee, Seung Min; Im, Sung Gap; et al, 한국과학기술원, 2022

2
Elastic Interfacial Layer Enabled the High-Temperature Performance of Lithium-Ion Batteries via Utilization of Synthetic Fluorosulfate Additive

Moon, Hyeongyu; Choi, Nam-Soon; Nam, Huibeom; Kim, Min Pyeong; Lee, Seung Min; Kim, Hyeongjun; Jeon, Min Ho; et al, 244th ECS Meeting, The Electrochemical Society, 2023-10-10

3
Elastic Interfacial Layer Enabled the High-Temperature Performance of Lithium-Ion Batteries via Utilization of Synthetic Fluorosulfate Additive

Moon, Hyeongyu; Nam, Huibeom; Kim, Min Pyeong; Lee, Seung Min; Kim, Hyeongjun; Jeon, Min Ho; Lee, Yoon-Sung; et al, ADVANCED FUNCTIONAL MATERIALS, v.33, no.29, 2023-07

4
Functional polymeric passivation-led improvement of bias stress with long-term durability of edge-rich nanoporous MoS2 thin-film transistors

Park, Heekyeong; Choi, Junhwan; Shim, Junoh; Lee, Seung Min; On, Sungmin; Yun, Hyung Joong; Kim, Sunkook; et al, NPJ 2D MATERIALS AND APPLICATIONS, v.6, no.1, pp.21, 2022-03

5
Vertically stacked, low-voltage organic ternary logic circuits including nonvolatile floating-gate memory transistors

Choi, Junhwan; Lee, Changhyeon; Lee, Chungryeol; Park, Hongkeun; Lee, Seung Min; Kim, Chang-Hyun; Yoo, Hocheon; et al, NATURE COMMUNICATIONS, v.13, no.1, pp.2305, 2022-04

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