DC Field | Value | Language |
---|---|---|
dc.contributor.author | Noh, HK | - |
dc.contributor.author | Oh, YJ | - |
dc.contributor.author | Chang, Kee-Joo | - |
dc.date.accessioned | 2013-03-29T07:24:35Z | - |
dc.date.available | 2013-03-29T07:24:35Z | - |
dc.date.created | 2012-04-09 | - |
dc.date.issued | 2012-02 | - |
dc.identifier.citation | 2012 APS March Meeting, v., no., pp. - | - |
dc.identifier.uri | http://hdl.handle.net/10203/169018 | - |
dc.description.abstract | In high-k/metal gate stacks of complementary metal-oxide semiconductor devices, it is important to control the effective work functions of metals such that they should match to the doping levels of poly-Si gates. However, it is known that metal work functions are strongly affected by interface dipoles and defects. In this work, we perform first-principles density-functional calculations to study the Schottky barrier heights and the effective metal work functions in Ni/SiO2 and Ni/HfO2 interface structures. We use the advanced approaches such as hybrid density functional and quasi-particle GW calculations for the exchange-correlation potential and discuss the limitations of GGA calculations. We also examine the effects of O-vacancy defects introduced at the interface on the Schottky barrier height and the effective work function. We find that, in the Ni/HfO2 interface, the p-type Schottky barrier height tends to increase with increasing of the defect density due to the charge transfer at the interface, whereas it is little affected in the Ni/SiO2 interface. | - |
dc.language | ENG | - |
dc.publisher | APS | - |
dc.title | Density functional calculations of the Schottky barrier height and effective work function in Ni/oxide interfaces | - |
dc.type | Conference | - |
dc.type.rims | CONF | - |
dc.citation.publicationname | 2012 APS March Meeting | - |
dc.identifier.conferencecountry | United States | - |
dc.contributor.localauthor | Chang, Kee-Joo | - |
dc.contributor.nonIdAuthor | Noh, HK | - |
dc.contributor.nonIdAuthor | Oh, YJ | - |
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