DC Field | Value | Language |
---|---|---|
dc.contributor.author | Oh, YJ | - |
dc.contributor.author | Noh, HK | - |
dc.contributor.author | Kim, GM | - |
dc.contributor.author | Chang, Kee-Joo | - |
dc.date.accessioned | 2013-03-29T07:24:24Z | - |
dc.date.available | 2013-03-29T07:24:24Z | - |
dc.date.created | 2012-04-09 | - |
dc.date.issued | 2012-02 | - |
dc.identifier.citation | 2012 APS March Meeting, v., no., pp. - | - |
dc.identifier.uri | http://hdl.handle.net/10203/169017 | - |
dc.description.abstract | Boron dopants in metal-oxide-semiconductor field-effect transistors exhibit very peculiar behavior such as transient enhanced diffusion, clustering, and segregation. Especially, B segregation to the Si/SiO2 interface significantly affects the dopant distribution and thereby the device performance. However, there is a lack of studies on the mechanism for B segregation and diffusion in the Si/SiO2 interface. In this work, we perform first-principles density-functional calculations to understand how B dopants diffuse and segregate to SiO2. We generate two Si/SiO2 interface structures, in which crystalline alpha-quartz and amorphous SiO2 are placed on Si. Among various B configurations, we find that an interstitial B is energetically more favorable in the oxide, compared with a subsitutional B and a self-interstitial-B complex in Si. We examine the effect of point defects such as a floating bond and an oxygen vacancy in SiO2 on B segregation and also investigate B diffusion pathways across the Si/SiO2 interface. | - |
dc.language | ENG | - |
dc.publisher | APS | - |
dc.title | Segregation and diffusion of boron dopants in the Si/SiO2 interface | - |
dc.type | Conference | - |
dc.type.rims | CONF | - |
dc.citation.publicationname | 2012 APS March Meeting | - |
dc.identifier.conferencecountry | United States | - |
dc.contributor.localauthor | Chang, Kee-Joo | - |
dc.contributor.nonIdAuthor | Oh, YJ | - |
dc.contributor.nonIdAuthor | Noh, HK | - |
dc.contributor.nonIdAuthor | Kim, GM | - |
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