Development of Self-Aligned RTDs using a SiNx Sidewall Process

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dc.contributor.authorLee, H-
dc.contributor.authorLee, J-
dc.contributor.author양경훈-
dc.date.accessioned2013-03-29T06:31:33Z-
dc.date.available2013-03-29T06:31:33Z-
dc.date.created2012-02-06-
dc.date.issued2010-
dc.identifier.citationKorean Conference on Semiconductors, v., no., pp.564 - 565-
dc.identifier.urihttp://hdl.handle.net/10203/168667-
dc.languageENG-
dc.titleDevelopment of Self-Aligned RTDs using a SiNx Sidewall Process-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.beginningpage564-
dc.citation.endingpage565-
dc.citation.publicationnameKorean Conference on Semiconductors-
dc.identifier.conferencecountrySouth Korea-
dc.identifier.conferencecountrySouth Korea-
dc.contributor.localauthor양경훈-
dc.contributor.nonIdAuthorLee, H-
dc.contributor.nonIdAuthorLee, J-
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EE-Conference Papers(학술회의논문)
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