Understanding the origin of device instability in amorphous oxide semiconductor thin film transistors
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Chang, Kee-Joo | - |
| dc.contributor.author | Ryu, B. | - |
| dc.contributor.author | Noh, HK | - |
| dc.date.accessioned | 2013-03-29T06:17:44Z | - |
| dc.date.available | 2013-03-29T06:17:44Z | - |
| dc.date.created | 2012-04-06 | - |
| dc.date.issued | 2011-07 | - |
| dc.identifier.citation | 15th International Symposium on the Physics of Semiconductors and Applications, v., no., pp. - | - |
| dc.identifier.uri | http://hdl.handle.net/10203/168507 | - |
| dc.language | ENG | - |
| dc.publisher | ISPSA | - |
| dc.title | Understanding the origin of device instability in amorphous oxide semiconductor thin film transistors | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.publicationname | 15th International Symposium on the Physics of Semiconductors and Applications | - |
| dc.identifier.conferencecountry | South Korea | - |
| dc.contributor.localauthor | Chang, Kee-Joo | - |
| dc.contributor.nonIdAuthor | Ryu, B. | - |
| dc.contributor.nonIdAuthor | Noh, HK | - |
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