Improvement of Data Retention and Erase Speed using Cubic-Structured HfO2 for Charge-trap type flash memory device
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 조병진 | - |
| dc.date.accessioned | 2013-03-28T11:56:30Z | - |
| dc.date.available | 2013-03-28T11:56:30Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 2010-02-25 | - |
| dc.identifier.citation | 17th Korean Conference on Semiconductors, v., no., pp. - | - |
| dc.identifier.uri | http://hdl.handle.net/10203/165488 | - |
| dc.language | KOR | - |
| dc.publisher | 17th Korean Conference on Semiconductors | - |
| dc.title | Improvement of Data Retention and Erase Speed using Cubic-Structured HfO2 for Charge-trap type flash memory device | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.publicationname | 17th Korean Conference on Semiconductors | - |
| dc.identifier.conferencecountry | South Korea | - |
| dc.identifier.conferencecountry | South Korea | - |
| dc.contributor.localauthor | 조병진 | - |
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