In-Depth Study on Mechanism of the Performance Improvement by High Temperature Annealing of the Al2O3 in a Charge-Trap Type Flash Memory Device
- Publisher
- SSDM 2010
- Issue Date
- 2010-09-23
- Language
- ENG
- Citation
2010 International Conference on Solid State Devices and Materials
- Appears in Collection
- EE-Conference Papers(학술회의논문)
- Files in This Item
- There are no files associated with this item.
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