In-Depth Study on Mechanism of the Performance Improvement by High Temperature Annealing of the Al2O3 in a Charge-Trap Type Flash Memory Device

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Publisher
SSDM 2010
Issue Date
2010-09-23
Language
ENG
Citation

2010 International Conference on Solid State Devices and Materials

URI
http://hdl.handle.net/10203/165301
Appears in Collection
EE-Conference Papers(학술회의논문)
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