Hole gas induced by defects in Ge/Si core-shell nanowires

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dc.contributor.authorPark, J.-S.ko
dc.contributor.authorRyu, Bko
dc.contributor.authorMoon, C.-Y.ko
dc.contributor.authorChang, Kee-Jooko
dc.date.accessioned2013-03-28T09:53:01Z-
dc.date.available2013-03-28T09:53:01Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2010-07-
dc.identifier.citation30th International Conference on the Physics of Semiconductors-
dc.identifier.urihttp://hdl.handle.net/10203/164684-
dc.languageEnglish-
dc.publisher123-
dc.titleHole gas induced by defects in Ge/Si core-shell nanowires-
dc.typeConference-
dc.identifier.wosid000301053000136-
dc.identifier.scopusid2-s2.0-84862804170-
dc.type.rimsCONF-
dc.citation.publicationname30th International Conference on the Physics of Semiconductors-
dc.identifier.conferencecountryKO-
dc.identifier.conferencelocationSeoul-
dc.contributor.localauthorChang, Kee-Joo-
dc.contributor.nonIdAuthorPark, J.-S.-
dc.contributor.nonIdAuthorRyu, B-
dc.contributor.nonIdAuthorMoon, C.-Y.-
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PH-Conference Papers(학술회의논문)
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