The electronic structure of O-vacancy at the interface between Si and HfO_2
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Ryu, B. | - |
| dc.contributor.author | Chang, Kee-Joo | - |
| dc.date.accessioned | 2013-03-28T09:42:54Z | - |
| dc.date.available | 2013-03-28T09:42:54Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 2010-03 | - |
| dc.identifier.citation | 2010 March Meeting of the American Physical Society, v., no., pp. - | - |
| dc.identifier.uri | http://hdl.handle.net/10203/164605 | - |
| dc.language | ENG | - |
| dc.publisher | American Physical Society | - |
| dc.title | The electronic structure of O-vacancy at the interface between Si and HfO_2 | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.publicationname | 2010 March Meeting of the American Physical Society | - |
| dc.identifier.conferencecountry | United States | - |
| dc.identifier.conferencecountry | United States | - |
| dc.contributor.localauthor | Chang, Kee-Joo | - |
| dc.contributor.nonIdAuthor | Ryu, B. | - |
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