DC Field | Value | Language |
---|---|---|
dc.contributor.author | Sang H.J. | - |
dc.contributor.author | Dong S.K. | - |
dc.contributor.author | Jeon, DukYoung | - |
dc.date.accessioned | 2013-03-28T09:37:31Z | - |
dc.date.available | 2013-03-28T09:37:31Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2011-07 | - |
dc.identifier.citation | Symposium on Wide Bandgap Semiconductors (III-Nitrides, SiC, and Diamond)Part of the International Union of Materials Research Societies and International Conference on Electronic Materials 2010 (IUMRS&ICEM_Korea 2010), Symposium on Wide Bandgap Semiconductors (III-Nitrides, SiC, and Diamond), v.326, no.1, pp.116 - 119 | - |
dc.identifier.issn | 0022-0248 | - |
dc.identifier.uri | http://hdl.handle.net/10203/164574 | - |
dc.language | ENG | - |
dc.publisher | International Union of Materials Research Societies | - |
dc.title | Effect of substitution of nitrogen ions to red-emitting Sr 3B2O6-3/2xNx:Eu2 oxy-nitride phosphor for the application to white LED | - |
dc.type | Conference | - |
dc.identifier.scopusid | 2-s2.0-79960170287 | - |
dc.type.rims | CONF | - |
dc.citation.volume | 326 | - |
dc.citation.issue | 1 | - |
dc.citation.beginningpage | 116 | - |
dc.citation.endingpage | 119 | - |
dc.citation.publicationname | Symposium on Wide Bandgap Semiconductors (III-Nitrides, SiC, and Diamond)Part of the International Union of Materials Research Societies and International Conference on Electronic Materials 2010 (IUMRS&ICEM_Korea 2010), Symposium on Wide Bandgap Semiconductors (III-Nitrides, SiC, and Diamond) | - |
dc.identifier.conferencecountry | South Korea | - |
dc.identifier.conferencecountry | South Korea | - |
dc.identifier.conferencecountry | South Korea | - |
dc.contributor.localauthor | Jeon, DukYoung | - |
dc.contributor.nonIdAuthor | Sang H.J. | - |
dc.contributor.nonIdAuthor | Dong S.K. | - |
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