Effect of O-vacancy on the device instability of amorphous zinc-tin-oxide thin-film-transistors
- Issue Date
- 2010-10-11
- Language
- ENG
- Citation
10th International Meeting on Information Display and International Display Manufacturing Conference and Asia Display 2010, IMID/IDMC/ASIA Display 2010, pp.664 - 665
- ISSN
- 1738-7558
- Appears in Collection
- PH-Conference Papers(학술회의논문)
- Files in This Item
- There are no files associated with this item.
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