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College of Engineering(공과대학)Dept. of Nuclear and Quantum Engineering(원자력및양자공학과)NE-Conference Papers(학술회의논문)

Low power operating bipolar TMO ReRAM for sub 10 nm era

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dc.contributor.authorKim M.J.ko
dc.contributor.authorBaek I.G.ko
dc.contributor.authorHa Y.H.ko
dc.contributor.authorBaik, Seung Jaeko
dc.contributor.authorKim J.H.ko
dc.contributor.authorSeong D.J.ko
dc.contributor.authorKim S.J.ko
dc.contributor.authorKwon Y.H.ko
dc.contributor.authorLim C.R.ko
dc.contributor.authorPark H.K.ko
dc.contributor.authorGilmer D.ko
dc.contributor.authorKirsch P.ko
dc.contributor.authorJammy R.ko
dc.contributor.authorShin Y.G.ko
dc.contributor.authorChoi S.ko
dc.contributor.authorChung C.ko
dc.date.accessioned2013-03-28T08:42:09Z-
dc.date.available2013-03-28T08:42:09Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2010-12-06-
dc.identifier.citation2010 IEEE International Electron Devices Meeting, IEDM 2010-
dc.identifier.issn0163-1918-
dc.identifier.urihttp://hdl.handle.net/10203/164228-
dc.languageEnglish-
dc.publisherIEDM-
dc.titleLow power operating bipolar TMO ReRAM for sub 10 nm era-
dc.typeConference-
dc.identifier.wosid000287997300115-
dc.identifier.scopusid2-s2.0-79951842555-
dc.type.rimsCONF-
dc.citation.publicationname2010 IEEE International Electron Devices Meeting, IEDM 2010-
dc.identifier.conferencecountryUS-
dc.identifier.conferencelocationSan Francisco, CA-
dc.contributor.nonIdAuthorKim M.J.-
dc.contributor.nonIdAuthorBaek I.G.-
dc.contributor.nonIdAuthorHa Y.H.-
dc.contributor.nonIdAuthorKim J.H.-
dc.contributor.nonIdAuthorSeong D.J.-
dc.contributor.nonIdAuthorKim S.J.-
dc.contributor.nonIdAuthorKwon Y.H.-
dc.contributor.nonIdAuthorLim C.R.-
dc.contributor.nonIdAuthorPark H.K.-
dc.contributor.nonIdAuthorGilmer D.-
dc.contributor.nonIdAuthorKirsch P.-
dc.contributor.nonIdAuthorJammy R.-
dc.contributor.nonIdAuthorShin Y.G.-
dc.contributor.nonIdAuthorChoi S.-
dc.contributor.nonIdAuthorChung C.-
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