Quantum mechical simulation of hole transport in p-type Si Schottky barrier MOSFETs
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 신민철 | - |
| dc.date.accessioned | 2013-03-28T08:29:53Z | - |
| dc.date.available | 2013-03-28T08:29:53Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 2010-08 | - |
| dc.identifier.citation | NANO KOREA, v., no., pp. - | - |
| dc.identifier.uri | http://hdl.handle.net/10203/164154 | - |
| dc.language | KOR | - |
| dc.publisher | 대한금속재료학회 | - |
| dc.title | Quantum mechical simulation of hole transport in p-type Si Schottky barrier MOSFETs | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.publicationname | NANO KOREA | - |
| dc.identifier.conferencecountry | South Korea | - |
| dc.contributor.localauthor | 신민철 | - |
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