Characterization on Structural properties of Ge-Bi-Te ternary eutectic phase for PRAM application

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dc.contributor.authorLee, Jeong Yong-
dc.contributor.authorSun, CW-
dc.contributor.authorKim, YT-
dc.date.accessioned2013-03-27T11:15:34Z-
dc.date.available2013-03-27T11:15:34Z-
dc.date.created2012-02-06-
dc.date.issued2008-02-21-
dc.identifier.citationThe 15th Korean Conference on Semiconductors, v., no., pp. --
dc.identifier.urihttp://hdl.handle.net/10203/161950-
dc.languageKOR-
dc.titleCharacterization on Structural properties of Ge-Bi-Te ternary eutectic phase for PRAM application-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.publicationnameThe 15th Korean Conference on Semiconductors-
dc.identifier.conferencecountrySouth Korea-
dc.identifier.conferencecountrySouth Korea-
dc.contributor.localauthorLee, Jeong Yong-
dc.contributor.nonIdAuthorSun, CW-
dc.contributor.nonIdAuthorKim, YT-
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MS-Conference Papers(학술회의논문)
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