DC Field | Value | Language |
---|---|---|
dc.contributor.author | Cho, Byung Jin | - |
dc.contributor.author | Zang, H | - |
dc.contributor.author | Chua, CK | - |
dc.contributor.author | Loh, WY | - |
dc.date.accessioned | 2013-03-27T08:12:22Z | - |
dc.date.available | 2013-03-27T08:12:22Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2007 | - |
dc.identifier.citation | Electrochemical Society Meeting, SYMPOSIUM E1, v., no., pp. - | - |
dc.identifier.uri | http://hdl.handle.net/10203/160710 | - |
dc.language | ENG | - |
dc.title | Dopant Segregated Pt and Ni-Germanide Schottky S/D p-MOSFETs with Strained Si-SiGe channel, 211th Electrochemical Society Meeting, SYMPOSIUM E1 | - |
dc.type | Conference | - |
dc.type.rims | CONF | - |
dc.citation.publicationname | Electrochemical Society Meeting, SYMPOSIUM E1 | - |
dc.identifier.conferencecountry | United States | - |
dc.identifier.conferencecountry | United States | - |
dc.contributor.localauthor | Cho, Byung Jin | - |
dc.contributor.nonIdAuthor | Zang, H | - |
dc.contributor.nonIdAuthor | Chua, CK | - |
dc.contributor.nonIdAuthor | Loh, WY | - |
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