Dopant Segregated Pt and Ni-Germanide Schottky S/D p-MOSFETs with Strained Si-SiGe channel, 211th Electrochemical Society Meeting, SYMPOSIUM E1

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dc.contributor.authorCho, Byung Jin-
dc.contributor.authorZang, H-
dc.contributor.authorChua, CK-
dc.contributor.authorLoh, WY-
dc.date.accessioned2013-03-27T08:12:22Z-
dc.date.available2013-03-27T08:12:22Z-
dc.date.created2012-02-06-
dc.date.issued2007-
dc.identifier.citationElectrochemical Society Meeting, SYMPOSIUM E1, v., no., pp. --
dc.identifier.urihttp://hdl.handle.net/10203/160710-
dc.languageENG-
dc.titleDopant Segregated Pt and Ni-Germanide Schottky S/D p-MOSFETs with Strained Si-SiGe channel, 211th Electrochemical Society Meeting, SYMPOSIUM E1-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.publicationnameElectrochemical Society Meeting, SYMPOSIUM E1-
dc.identifier.conferencecountryUnited States-
dc.identifier.conferencecountryUnited States-
dc.contributor.localauthorCho, Byung Jin-
dc.contributor.nonIdAuthorZang, H-
dc.contributor.nonIdAuthorChua, CK-
dc.contributor.nonIdAuthorLoh, WY-
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EE-Conference Papers(학술회의논문)
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