A Study of Dual-Bit Nonvolatile Memory Characteristics by the Channel-Hot-Electron (CHEI) Program Mechanism for Double-Gate FinFET SONOS Cells
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 최양규 | - |
| dc.contributor.author | 류성완 | - |
| dc.contributor.author | 한진우 | - |
| dc.contributor.author | 김진수 | - |
| dc.contributor.author | 이광희 | - |
| dc.contributor.author | 이기성 | - |
| dc.contributor.author | 오재섭 | - |
| dc.contributor.author | 송명호 | - |
| dc.contributor.author | 박윤창 | - |
| dc.contributor.author | 김정우 | - |
| dc.date.accessioned | 2013-03-27T07:06:28Z | - |
| dc.date.available | 2013-03-27T07:06:28Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 2008 | - |
| dc.identifier.citation | 제 15회 반도체 학술대회, v., no., pp.409 - 410 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/160216 | - |
| dc.language | KOR | - |
| dc.title | A Study of Dual-Bit Nonvolatile Memory Characteristics by the Channel-Hot-Electron (CHEI) Program Mechanism for Double-Gate FinFET SONOS Cells | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.beginningpage | 409 | - |
| dc.citation.endingpage | 410 | - |
| dc.citation.publicationname | 제 15회 반도체 학술대회 | - |
| dc.identifier.conferencecountry | South Korea | - |
| dc.identifier.conferencecountry | South Korea | - |
| dc.contributor.localauthor | 최양규 | - |
| dc.contributor.nonIdAuthor | 류성완 | - |
| dc.contributor.nonIdAuthor | 한진우 | - |
| dc.contributor.nonIdAuthor | 김진수 | - |
| dc.contributor.nonIdAuthor | 이광희 | - |
| dc.contributor.nonIdAuthor | 이기성 | - |
| dc.contributor.nonIdAuthor | 오재섭 | - |
| dc.contributor.nonIdAuthor | 송명호 | - |
| dc.contributor.nonIdAuthor | 박윤창 | - |
| dc.contributor.nonIdAuthor | 김정우 | - |
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