An InGaAs PIN-diode based with H-I characteristics broadband traveling-wave switch
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Yang, JG | - |
| dc.contributor.author | Kim, M | - |
| dc.contributor.author | Yang, Kyounghoon | - |
| dc.date.accessioned | 2013-03-27T07:00:58Z | - |
| dc.date.available | 2013-03-27T07:00:58Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 2009 | - |
| dc.identifier.citation | IEEE International Conference on InP and Related Materials, v., no., pp.207 - 209 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/160183 | - |
| dc.language | ENG | - |
| dc.publisher | IEEE | - |
| dc.title | An InGaAs PIN-diode based with H-I characteristics broadband traveling-wave switch | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.beginningpage | 207 | - |
| dc.citation.endingpage | 209 | - |
| dc.citation.publicationname | IEEE International Conference on InP and Related Materials | - |
| dc.identifier.conferencecountry | United States | - |
| dc.identifier.conferencecountry | United States | - |
| dc.contributor.localauthor | Yang, Kyounghoon | - |
| dc.contributor.nonIdAuthor | Yang, JG | - |
| dc.contributor.nonIdAuthor | Kim, M | - |
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