DC Field | Value | Language |
---|---|---|
dc.contributor.author | Cho, Byung Jin | - |
dc.contributor.author | Suthram, S | - |
dc.contributor.author | Majhi, P | - |
dc.contributor.author | Sun, G | - |
dc.contributor.author | Kalra, P | - |
dc.contributor.author | Harris, HR | - |
dc.contributor.author | Choi, KJ | - |
dc.date.accessioned | 2013-03-27T05:52:59Z | - |
dc.date.available | 2013-03-27T05:52:59Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2007 | - |
dc.identifier.citation | International Electron Devices Meeting, v., no., pp.727 - 730 | - |
dc.identifier.uri | http://hdl.handle.net/10203/159718 | - |
dc.language | ENG | - |
dc.title | High performance pMOSFETs using Si/SiGe/Si quantum wells with high-K/metal gate stacks and additive uniaxial strain for 22nm technology node | - |
dc.type | Conference | - |
dc.type.rims | CONF | - |
dc.citation.beginningpage | 727 | - |
dc.citation.endingpage | 730 | - |
dc.citation.publicationname | International Electron Devices Meeting | - |
dc.identifier.conferencecountry | United States | - |
dc.identifier.conferencecountry | United States | - |
dc.contributor.localauthor | Cho, Byung Jin | - |
dc.contributor.nonIdAuthor | Suthram, S | - |
dc.contributor.nonIdAuthor | Majhi, P | - |
dc.contributor.nonIdAuthor | Sun, G | - |
dc.contributor.nonIdAuthor | Kalra, P | - |
dc.contributor.nonIdAuthor | Harris, HR | - |
dc.contributor.nonIdAuthor | Choi, KJ | - |
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