Effects of Post Annealing on the Properties of Al2O3/HfO/ZnO Thin Film Transistor Depoisted by Atomic Layer Depositon
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Lee, Jeong Yong | - |
| dc.date.accessioned | 2013-03-27T04:39:44Z | - |
| dc.date.available | 2013-03-27T04:39:44Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 2009-11-05 | - |
| dc.identifier.citation | 2009 GJ-NST International Conference on Nano Science and Nano Technology, v., no., pp. - | - |
| dc.identifier.uri | http://hdl.handle.net/10203/159176 | - |
| dc.language | ENG | - |
| dc.title | Effects of Post Annealing on the Properties of Al2O3/HfO/ZnO Thin Film Transistor Depoisted by Atomic Layer Depositon | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.publicationname | 2009 GJ-NST International Conference on Nano Science and Nano Technology | - |
| dc.identifier.conferencecountry | South Korea | - |
| dc.identifier.conferencecountry | South Korea | - |
| dc.contributor.localauthor | Lee, Jeong Yong | - |
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