Plasma-enhanced atomic layer deposition of Ta(C)N thin films for copper diffusion barrier
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kim K.H. | - |
| dc.contributor.author | Seong-Jun Jeong | - |
| dc.contributor.author | Yoon J.S. | - |
| dc.contributor.author | Kim Y.M. | - |
| dc.contributor.author | Kwon S.H. | - |
| dc.date.accessioned | 2013-03-27T03:58:47Z | - |
| dc.date.available | 2013-03-27T03:58:47Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 2009-10-05 | - |
| dc.identifier.citation | 5th Symposium on Atomic Layer Deposition - 216th Meeting of the Electrochemical Society, v.25, no., pp.301 - 308 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/158870 | - |
| dc.language | ENG | - |
| dc.title | Plasma-enhanced atomic layer deposition of Ta(C)N thin films for copper diffusion barrier | - |
| dc.type | Conference | - |
| dc.identifier.scopusid | 2-s2.0-74249093324 | - |
| dc.type.rims | CONF | - |
| dc.citation.volume | 25 | - |
| dc.citation.beginningpage | 301 | - |
| dc.citation.endingpage | 308 | - |
| dc.citation.publicationname | 5th Symposium on Atomic Layer Deposition - 216th Meeting of the Electrochemical Society | - |
| dc.identifier.conferencecountry | Austria | - |
| dc.identifier.conferencecountry | Austria | - |
| dc.contributor.localauthor | Seong-Jun Jeong | - |
| dc.contributor.nonIdAuthor | Kim K.H. | - |
| dc.contributor.nonIdAuthor | Yoon J.S. | - |
| dc.contributor.nonIdAuthor | Kim Y.M. | - |
| dc.contributor.nonIdAuthor | Kwon S.H. | - |
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