Impact of interfacial layer control in high-K gate dielectrics on GaAs for advanced CMOS devicesImpact of interfacial layer control in high-K gate dielectrics on GaAs for advanced CMOS devices

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dc.contributor.authorCho, Byung Jin-
dc.date.accessioned2013-03-27T03:08:35Z-
dc.date.available2013-03-27T03:08:35Z-
dc.date.created2012-02-06-
dc.date.issued2007-04-09-
dc.identifier.citation2007 MRS Spring Meeting, v., no., pp.0 - 0-
dc.identifier.urihttp://hdl.handle.net/10203/158522-
dc.languageENG-
dc.publisherMRS-
dc.titleImpact of interfacial layer control in high-K gate dielectrics on GaAs for advanced CMOS devices-
dc.title.alternativeImpact of interfacial layer control in high-K gate dielectrics on GaAs for advanced CMOS devices-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.beginningpage0-
dc.citation.endingpage0-
dc.citation.publicationname2007 MRS Spring Meeting-
dc.identifier.conferencecountryUnited States-
dc.identifier.conferencecountryUnited States-
dc.contributor.localauthorCho, Byung Jin-
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EE-Conference Papers(학술회의논문)
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