Gadolinium Oxide(Gd2O3) Blocking Layer for Fast Program and Erase Speed in SONOS-Type Flash Memory Devices
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Cho, Byung Jin | - |
| dc.contributor.author | Pu, J | - |
| dc.contributor.author | Kim, SJ | - |
| dc.contributor.author | Kim, YS | - |
| dc.date.accessioned | 2013-03-27T02:55:50Z | - |
| dc.date.available | 2013-03-27T02:55:50Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 2008-03-25 | - |
| dc.identifier.citation | Material Research Society 2008 Spring Meeting, v., no., pp. - | - |
| dc.identifier.uri | http://hdl.handle.net/10203/158441 | - |
| dc.language | KOR | - |
| dc.title | Gadolinium Oxide(Gd2O3) Blocking Layer for Fast Program and Erase Speed in SONOS-Type Flash Memory Devices | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.publicationname | Material Research Society 2008 Spring Meeting | - |
| dc.identifier.conferencecountry | United States | - |
| dc.identifier.conferencecountry | United States | - |
| dc.contributor.localauthor | Cho, Byung Jin | - |
| dc.contributor.nonIdAuthor | Pu, J | - |
| dc.contributor.nonIdAuthor | Kim, SJ | - |
| dc.contributor.nonIdAuthor | Kim, YS | - |
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