Gadolinium Oxide(Gd2O3) Blocking Layer for Fast Program and Erase Speed in SONOS-Type Flash Memory Devices

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dc.contributor.authorCho, Byung Jin-
dc.contributor.authorPu, J-
dc.contributor.authorKim, SJ-
dc.contributor.authorKim, YS-
dc.date.accessioned2013-03-27T02:55:50Z-
dc.date.available2013-03-27T02:55:50Z-
dc.date.created2012-02-06-
dc.date.issued2008-03-25-
dc.identifier.citationMaterial Research Society 2008 Spring Meeting, v., no., pp. --
dc.identifier.urihttp://hdl.handle.net/10203/158441-
dc.languageKOR-
dc.titleGadolinium Oxide(Gd2O3) Blocking Layer for Fast Program and Erase Speed in SONOS-Type Flash Memory Devices-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.publicationnameMaterial Research Society 2008 Spring Meeting-
dc.identifier.conferencecountryUnited States-
dc.identifier.conferencecountryUnited States-
dc.contributor.localauthorCho, Byung Jin-
dc.contributor.nonIdAuthorPu, J-
dc.contributor.nonIdAuthorKim, SJ-
dc.contributor.nonIdAuthorKim, YS-
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EE-Conference Papers(학술회의논문)
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