DC Field | Value | Language |
---|---|---|
dc.contributor.author | Cho, Byung Jin | - |
dc.contributor.author | Zhang, G | - |
dc.contributor.author | Hwang, WS | - |
dc.contributor.author | Bobade, SM | - |
dc.contributor.author | Lee, SH | - |
dc.contributor.author | Yoo, WJ | - |
dc.date.accessioned | 2013-03-27T02:24:56Z | - |
dc.date.available | 2013-03-27T02:24:56Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2007-12-01 | - |
dc.identifier.citation | International Electron Device Meeting (IEDM) 2007, v., no., pp.0 - 0 | - |
dc.identifier.uri | http://hdl.handle.net/10203/158269 | - |
dc.language | ENG | - |
dc.title | Novel ZrO2/Si3N4 Dual Charge Storage Layer to Form Step-Up Potential Wells for Highly Reliable Multi-Level Cell Application | - |
dc.title.alternative | Novel ZrO2/Si3N4 Dual Charge Storage Layer to Form Step-Up Potential Wells for Highly Reliable Multi-Level Cell Application | - |
dc.type | Conference | - |
dc.type.rims | CONF | - |
dc.citation.beginningpage | 0 | - |
dc.citation.endingpage | 0 | - |
dc.citation.publicationname | International Electron Device Meeting (IEDM) 2007 | - |
dc.identifier.conferencecountry | United States | - |
dc.identifier.conferencecountry | United States | - |
dc.contributor.localauthor | Cho, Byung Jin | - |
dc.contributor.nonIdAuthor | Zhang, G | - |
dc.contributor.nonIdAuthor | Hwang, WS | - |
dc.contributor.nonIdAuthor | Bobade, SM | - |
dc.contributor.nonIdAuthor | Lee, SH | - |
dc.contributor.nonIdAuthor | Yoo, WJ | - |
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