Thermal techniques to improve ZnO-based FBAR devices characteristics
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Mai L. | - |
| dc.contributor.author | Do N.-H. | - |
| dc.contributor.author | Hoang T.-A. | - |
| dc.contributor.author | Tran V.-S. | - |
| dc.contributor.author | Pham L.-P.B. | - |
| dc.contributor.author | Thi T.-T.N. | - |
| dc.contributor.author | Le H.N. | - |
| dc.contributor.author | Yoon G. | - |
| dc.date.accessioned | 2013-03-27T00:18:39Z | - |
| dc.date.available | 2013-03-27T00:18:39Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 2009-10-12 | - |
| dc.identifier.citation | 2009 International Conference on Advanced Technologies for Communications, ATC 2009, v., no., pp.183 - 186 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/157449 | - |
| dc.language | ENG | - |
| dc.title | Thermal techniques to improve ZnO-based FBAR devices characteristics | - |
| dc.type | Conference | - |
| dc.identifier.scopusid | 2-s2.0-74549167864 | - |
| dc.type.rims | CONF | - |
| dc.citation.beginningpage | 183 | - |
| dc.citation.endingpage | 186 | - |
| dc.citation.publicationname | 2009 International Conference on Advanced Technologies for Communications, ATC 2009 | - |
| dc.identifier.conferencecountry | Viet nam | - |
| dc.identifier.conferencecountry | Viet nam | - |
| dc.contributor.localauthor | Yoon G. | - |
| dc.contributor.nonIdAuthor | Mai L. | - |
| dc.contributor.nonIdAuthor | Do N.-H. | - |
| dc.contributor.nonIdAuthor | Hoang T.-A. | - |
| dc.contributor.nonIdAuthor | Tran V.-S. | - |
| dc.contributor.nonIdAuthor | Pham L.-P.B. | - |
| dc.contributor.nonIdAuthor | Thi T.-T.N. | - |
| dc.contributor.nonIdAuthor | Le H.N. | - |
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