DC Field | Value | Language |
---|---|---|
dc.contributor.author | Choi, Yang-Kyu | - |
dc.contributor.author | Han, J.-W. | - |
dc.contributor.author | Ryu, S.-W. | - |
dc.contributor.author | Kim, C. | - |
dc.contributor.author | Kim, S.-H. | - |
dc.contributor.author | Im, M. | - |
dc.contributor.author | Choi, S. J. | - |
dc.contributor.author | Kim, JS | - |
dc.contributor.author | Kim, KH | - |
dc.contributor.author | Lee, GS | - |
dc.contributor.author | Oh, JS | - |
dc.contributor.author | Song, MH | - |
dc.contributor.author | Park, YC | - |
dc.contributor.author | Kim, JW | - |
dc.date.accessioned | 2013-03-26T01:09:26Z | - |
dc.date.available | 2013-03-26T01:09:26Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2007-12 | - |
dc.identifier.citation | IEEE International Electron Device Meeting, v., no., pp.929 - 932 | - |
dc.identifier.uri | http://hdl.handle.net/10203/156647 | - |
dc.language | ENG | - |
dc.title | A High Speed Unified-RAM (URAM) Cell Multi-Functioning Capacitorless DRAM and NVM | - |
dc.type | Conference | - |
dc.type.rims | CONF | - |
dc.citation.beginningpage | 929 | - |
dc.citation.endingpage | 932 | - |
dc.citation.publicationname | IEEE International Electron Device Meeting | - |
dc.identifier.conferencecountry | United States | - |
dc.identifier.conferencecountry | United States | - |
dc.contributor.localauthor | Choi, Yang-Kyu | - |
dc.contributor.nonIdAuthor | Han, J.-W. | - |
dc.contributor.nonIdAuthor | Ryu, S.-W. | - |
dc.contributor.nonIdAuthor | Kim, C. | - |
dc.contributor.nonIdAuthor | Kim, S.-H. | - |
dc.contributor.nonIdAuthor | Im, M. | - |
dc.contributor.nonIdAuthor | Choi, S. J. | - |
dc.contributor.nonIdAuthor | Kim, JS | - |
dc.contributor.nonIdAuthor | Kim, KH | - |
dc.contributor.nonIdAuthor | Lee, GS | - |
dc.contributor.nonIdAuthor | Oh, JS | - |
dc.contributor.nonIdAuthor | Song, MH | - |
dc.contributor.nonIdAuthor | Park, YC | - |
dc.contributor.nonIdAuthor | Kim, JW | - |
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