Effects of film thickness and preferred orientation on the dielectric constants of HF-aluminate films deposited by PEALD
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Moon H.-S. | - |
| dc.contributor.author | Joo D. | - |
| dc.contributor.author | Park P.-K. | - |
| dc.contributor.author | Kang S.-W. | - |
| dc.date.accessioned | 2013-03-26T00:43:35Z | - |
| dc.date.available | 2013-03-26T00:43:35Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 2008-10-13 | - |
| dc.identifier.citation | Atomic Layer Deposition Applications 4 - 214th ECS Meeting, v., no., pp.343 - 348 | - |
| dc.identifier.issn | 1938-5862 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/156479 | - |
| dc.language | ENG | - |
| dc.title | Effects of film thickness and preferred orientation on the dielectric constants of HF-aluminate films deposited by PEALD | - |
| dc.type | Conference | - |
| dc.identifier.scopusid | 2-s2.0-63149193825 | - |
| dc.type.rims | CONF | - |
| dc.citation.beginningpage | 343 | - |
| dc.citation.endingpage | 348 | - |
| dc.citation.publicationname | Atomic Layer Deposition Applications 4 - 214th ECS Meeting | - |
| dc.identifier.conferencecountry | United States | - |
| dc.identifier.conferencecountry | United States | - |
| dc.contributor.localauthor | Kang S.-W. | - |
| dc.contributor.nonIdAuthor | Moon H.-S. | - |
| dc.contributor.nonIdAuthor | Joo D. | - |
| dc.contributor.nonIdAuthor | Park P.-K. | - |
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