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College of Engineering(공과대학)Dept. of Materials Science and Engineering(신소재공학과)MS-Conference Papers(학술회의논문)

Characteristics of InSbTe phase-change random access memory

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dc.contributor.authorKim, YT-
dc.contributor.authorKim, ET-
dc.contributor.authorLee, Jeong Yong-
dc.date.accessioned2013-03-19T01:03:53Z-
dc.date.available2013-03-19T01:03:53Z-
dc.date.created2012-02-06-
dc.date.issued2009-07-22-
dc.identifier.citation13th WSEAS International Conference on Circuits - Held as part of the 13th WSEAS CSCC Multiconference, v., no., pp.203 - 205-
dc.identifier.urihttp://hdl.handle.net/10203/154303-
dc.languageENG-
dc.titleCharacteristics of InSbTe phase-change random access memory-
dc.typeConference-
dc.identifier.scopusid2-s2.0-74549125378-
dc.type.rimsCONF-
dc.citation.beginningpage203-
dc.citation.endingpage205-
dc.citation.publicationname13th WSEAS International Conference on Circuits - Held as part of the 13th WSEAS CSCC Multiconference-
dc.identifier.conferencecountryGreece-
dc.identifier.conferencecountryGreece-
dc.contributor.localauthorLee, Jeong Yong-
dc.contributor.nonIdAuthorKim, YT-
dc.contributor.nonIdAuthorKim, ET-
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MS-Conference Papers(학술회의논문)
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