Electronic structure and stability of ferromagnetic GaN doped with Mn

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dc.contributor.authorKang, J.ko
dc.contributor.authorChang, Kee-Jooko
dc.contributor.authorKatayama-Yoshida, H.ko
dc.date.accessioned2013-03-18T22:48:11Z-
dc.date.available2013-03-18T22:48:11Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2004-07-26-
dc.identifier.citationPHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, pp.315 - 316-
dc.identifier.urihttp://hdl.handle.net/10203/153275-
dc.languageEnglish-
dc.publisherICPS-
dc.titleElectronic structure and stability of ferromagnetic GaN doped with Mn-
dc.typeConference-
dc.identifier.wosid000230723900129-
dc.identifier.scopusid2-s2.0-33749474008-
dc.type.rimsCONF-
dc.citation.beginningpage315-
dc.citation.endingpage316-
dc.citation.publicationnamePHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors-
dc.identifier.conferencecountryUS-
dc.identifier.conferencelocationFlagstaff, AZ-
dc.contributor.localauthorChang, Kee-Joo-
dc.contributor.nonIdAuthorKang, J.-
dc.contributor.nonIdAuthorKatayama-Yoshida, H.-
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PH-Conference Papers(학술회의논문)
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