LDA and LDA+U calculations for P-related defects in ZnO

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dc.contributor.authorLee, WJ-
dc.contributor.authorKang, J-
dc.contributor.authorChang, Kee-Joo-
dc.date.accessioned2013-03-18T20:17:03Z-
dc.date.available2013-03-18T20:17:03Z-
dc.date.created2012-02-06-
dc.date.issued2006-11-
dc.identifier.citationThe 9th Asian Workshop on First-Principles Electronic Structure Calculations, v., no., pp. --
dc.identifier.urihttp://hdl.handle.net/10203/152098-
dc.languageENG-
dc.publisherKIAS-
dc.titleLDA and LDA+U calculations for P-related defects in ZnO-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.publicationnameThe 9th Asian Workshop on First-Principles Electronic Structure Calculations-
dc.identifier.conferencecountrySouth Korea-
dc.identifier.conferencecountrySouth Korea-
dc.contributor.localauthorChang, Kee-Joo-
dc.contributor.nonIdAuthorLee, WJ-
dc.contributor.nonIdAuthorKang, J-
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PH-Conference Papers(학술회의논문)
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