DC Field | Value | Language |
---|---|---|
dc.contributor.author | Choi, Yang-Kyu | - |
dc.contributor.author | Ranade, P | - |
dc.contributor.author | Ha, D | - |
dc.contributor.author | Takeuchi, H | - |
dc.contributor.author | King, TJ | - |
dc.date.accessioned | 2013-03-18T19:01:58Z | - |
dc.date.available | 2013-03-18T19:01:58Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2003-03 | - |
dc.identifier.citation | 4th International AVS Conference on Microelectronics and Interfaces(ICMI 03), v., no., pp. - | - |
dc.identifier.uri | http://hdl.handle.net/10203/151457 | - |
dc.language | ENG | - |
dc.publisher | AVS | - |
dc.title | Metal gate technology for fully depleted SOI CMOS | - |
dc.type | Conference | - |
dc.type.rims | CONF | - |
dc.citation.publicationname | 4th International AVS Conference on Microelectronics and Interfaces(ICMI 03) | - |
dc.identifier.conferencecountry | United States | - |
dc.identifier.conferencecountry | United States | - |
dc.contributor.localauthor | Choi, Yang-Kyu | - |
dc.contributor.nonIdAuthor | Ranade, P | - |
dc.contributor.nonIdAuthor | Ha, D | - |
dc.contributor.nonIdAuthor | Takeuchi, H | - |
dc.contributor.nonIdAuthor | King, TJ | - |
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