Microstructural characterization of InGaN/GaN MQWs with different quantum well number
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Lee, Jeong Yong | - |
| dc.date.accessioned | 2013-03-18T18:44:04Z | - |
| dc.date.available | 2013-03-18T18:44:04Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 2003-02-01 | - |
| dc.identifier.citation | The 10th Korean Conference on Semiconductors, v., no., pp.759 - 760 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/151313 | - |
| dc.language | KOR | - |
| dc.title | Microstructural characterization of InGaN/GaN MQWs with different quantum well number | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.beginningpage | 759 | - |
| dc.citation.endingpage | 760 | - |
| dc.citation.publicationname | The 10th Korean Conference on Semiconductors | - |
| dc.identifier.conferencecountry | South Korea | - |
| dc.identifier.conferencecountry | South Korea | - |
| dc.contributor.localauthor | Lee, Jeong Yong | - |
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