Fabrication of High fmax InP DHBTs Using a New Wet Etching Method

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dc.contributor.authorJeong, Y-
dc.contributor.authorSong, Y-
dc.contributor.authorChoi, S-
dc.contributor.authorYoon, M-
dc.contributor.author양경훈-
dc.date.accessioned2013-03-18T18:31:36Z-
dc.date.available2013-03-18T18:31:36Z-
dc.date.created2012-02-06-
dc.date.issued2003-
dc.identifier.citationKorean Conference On Semiconductors, v., no., pp.347 - 348-
dc.identifier.urihttp://hdl.handle.net/10203/151227-
dc.languageENG-
dc.titleFabrication of High fmax InP DHBTs Using a New Wet Etching Method-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.beginningpage347-
dc.citation.endingpage348-
dc.citation.publicationnameKorean Conference On Semiconductors-
dc.identifier.conferencecountrySouth Korea-
dc.identifier.conferencecountrySouth Korea-
dc.contributor.localauthor양경훈-
dc.contributor.nonIdAuthorJeong, Y-
dc.contributor.nonIdAuthorSong, Y-
dc.contributor.nonIdAuthorChoi, S-
dc.contributor.nonIdAuthorYoon, M-
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EE-Conference Papers(학술회의논문)
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