Noise Analysis and Modeling of Microwave AlGaN/GaN HEMTs Considering Trap Effects

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dc.contributor.authorHwang, M-
dc.contributor.authorYang, Kyounghoon-
dc.date.accessioned2013-03-18T16:27:50Z-
dc.date.available2013-03-18T16:27:50Z-
dc.date.created2012-02-06-
dc.date.issued2005-
dc.identifier.citationInternational Joint Conference of MINT-MIS 2005/TSMMW 2005, v., no., pp.136 - 139-
dc.identifier.urihttp://hdl.handle.net/10203/150211-
dc.languageENG-
dc.titleNoise Analysis and Modeling of Microwave AlGaN/GaN HEMTs Considering Trap Effects-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.beginningpage136-
dc.citation.endingpage139-
dc.citation.publicationnameInternational Joint Conference of MINT-MIS 2005/TSMMW 2005-
dc.identifier.conferencecountrySouth Korea-
dc.identifier.conferencecountrySouth Korea-
dc.contributor.localauthorYang, Kyounghoon-
dc.contributor.nonIdAuthorHwang, M-
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EE-Conference Papers(학술회의논문)
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