Defect properties of Si impurities in HfO2: a physical origin of the threshold voltage problem in hafnium-based MOS devices
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Chang, Kee-Joo | - |
| dc.contributor.author | Kim, D.Y. | - |
| dc.contributor.author | Kang, J. | - |
| dc.date.accessioned | 2013-03-18T16:24:30Z | - |
| dc.date.available | 2013-03-18T16:24:30Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 2005-10 | - |
| dc.identifier.citation | 한국물리학회 가을학술논문발표회 , v., no., pp.547 - 547 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/150188 | - |
| dc.language | ENG | - |
| dc.publisher | 한국물리학회 | - |
| dc.title | Defect properties of Si impurities in HfO2: a physical origin of the threshold voltage problem in hafnium-based MOS devices | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.beginningpage | 547 | - |
| dc.citation.endingpage | 547 | - |
| dc.citation.publicationname | 한국물리학회 가을학술논문발표회 | - |
| dc.identifier.conferencecountry | South Korea | - |
| dc.identifier.conferencecountry | South Korea | - |
| dc.contributor.localauthor | Chang, Kee-Joo | - |
| dc.contributor.nonIdAuthor | Kim, D.Y. | - |
| dc.contributor.nonIdAuthor | Kang, J. | - |
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