Fabrication and characterization of AlAs/InGaAs/InAs Resonant Tunneling Diodes
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 홍성철 | - |
| dc.contributor.author | 김형태 | - |
| dc.contributor.author | 최성순 | - |
| dc.contributor.author | 김석진 | - |
| dc.contributor.author | 송생섭 | - |
| dc.contributor.author | 양경훈 | - |
| dc.contributor.author | 서광석 | - |
| dc.date.accessioned | 2013-03-18T14:43:06Z | - |
| dc.date.available | 2013-03-18T14:43:06Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 2003-02-27 | - |
| dc.identifier.citation | Korean Conference On Semiconductors, v., no., pp.341 - 342 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/149381 | - |
| dc.language | ENG | - |
| dc.title | Fabrication and characterization of AlAs/InGaAs/InAs Resonant Tunneling Diodes | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.beginningpage | 341 | - |
| dc.citation.endingpage | 342 | - |
| dc.citation.publicationname | Korean Conference On Semiconductors | - |
| dc.identifier.conferencecountry | South Korea | - |
| dc.identifier.conferencecountry | South Korea | - |
| dc.contributor.localauthor | 양경훈 | - |
| dc.contributor.nonIdAuthor | 홍성철 | - |
| dc.contributor.nonIdAuthor | 김형태 | - |
| dc.contributor.nonIdAuthor | 최성순 | - |
| dc.contributor.nonIdAuthor | 김석진 | - |
| dc.contributor.nonIdAuthor | 송생섭 | - |
| dc.contributor.nonIdAuthor | 서광석 | - |
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