A high performance CMOS direct down conversion mixer for UWB system

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This paper represents a high performance wideband CMOS direct down-conversion mixer for UWB based on 0.18 μm CMOS technology. The proposed mixer uses the current bleeding technique and an extra resonant inductor to improve the conversion gain, noise figure (NF) and linearity. Also, with an extra inductor and the careful choosing of transistor sizes, the mixer has a very low flicker noise. The shunt resistor matching is applied to have a 528MHz bandwidth matching at 50 Ohm. The simulation results show the voltage conversion gain of 20.5 dB, the double-side band NF of 5.6 dB. Two-tone test result indicates 11.25 dBm of IIP3 and higher than 70 dBm of IIP2. The circuit operates at the supply voltage of 1.8 V, and dissipates 11.5 mW.
Publisher
IEEE, 2004 Great Lakes Symposium on VLSI
Issue Date
2004-04-26
Language
English
Citation

2004 ACM Great lakes Symposium on VLSI, GLSVLSI 2004: VLSI in the Nanometer Era, pp.377 - 380

DOI
10.1145/988952.989043
URI
http://hdl.handle.net/10203/149346
Appears in Collection
EE-Conference Papers(학술회의논문)
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