Device characteristics of normal- incidence long-wavelength (λ ~5um) InAs/GaAs quantum-dot infrared photodetectors(Invited)
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 홍성철 | - |
| dc.contributor.author | 이상준 | - |
| dc.contributor.author | 노삼규 | - |
| dc.contributor.author | 이욱현 | - |
| dc.contributor.author | 이정일 | - |
| dc.date.accessioned | 2013-03-18T13:52:11Z | - |
| dc.date.available | 2013-03-18T13:52:11Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 2004 | - |
| dc.identifier.citation | Korean Conference on Semiconductors, v., no., pp. - | - |
| dc.identifier.uri | http://hdl.handle.net/10203/149011 | - |
| dc.language | KOR | - |
| dc.title | Device characteristics of normal- incidence long-wavelength (λ ~5um) InAs/GaAs quantum-dot infrared photodetectors(Invited) | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.publicationname | Korean Conference on Semiconductors | - |
| dc.identifier.conferencecountry | South Korea | - |
| dc.identifier.conferencecountry | South Korea | - |
| dc.contributor.localauthor | 홍성철 | - |
| dc.contributor.nonIdAuthor | 이상준 | - |
| dc.contributor.nonIdAuthor | 노삼규 | - |
| dc.contributor.nonIdAuthor | 이욱현 | - |
| dc.contributor.nonIdAuthor | 이정일 | - |
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