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College of Engineering(공과대학)Dept. of Materials Science and Engineering(신소재공학과)MS-Conference Papers(학술회의논문)

Origin of PL intensity increase of CaMgSi2O6:Eu2+ phosphor after baking process for PDPs application

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dc.contributor.authorJeon, DukYoung-
dc.contributor.authorIm, WB-
dc.contributor.authorKang, JH-
dc.contributor.authorLee, DC-
dc.contributor.authorLee, S-
dc.date.accessioned2013-03-18T12:15:07Z-
dc.date.available2013-03-18T12:15:07Z-
dc.date.created2012-02-06-
dc.date.issued2004-
dc.identifier.citationKyoto Joint Symposium, v., no., pp. --
dc.identifier.urihttp://hdl.handle.net/10203/148287-
dc.languageENG-
dc.titleOrigin of PL intensity increase of CaMgSi2O6:Eu2+ phosphor after baking process for PDPs application-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.publicationnameKyoto Joint Symposium-
dc.identifier.conferencecountryJapan-
dc.identifier.conferencecountryJapan-
dc.contributor.localauthorJeon, DukYoung-
dc.contributor.nonIdAuthorIm, WB-
dc.contributor.nonIdAuthorKang, JH-
dc.contributor.nonIdAuthorLee, DC-
dc.contributor.nonIdAuthorLee, S-
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MS-Conference Papers(학술회의논문)
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