DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jeon, DukYoung | - |
dc.contributor.author | Im, WB | - |
dc.contributor.author | Kang, JH | - |
dc.contributor.author | Lee, DC | - |
dc.contributor.author | Lee, S | - |
dc.date.accessioned | 2013-03-18T12:15:07Z | - |
dc.date.available | 2013-03-18T12:15:07Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2004 | - |
dc.identifier.citation | Kyoto Joint Symposium, v., no., pp. - | - |
dc.identifier.uri | http://hdl.handle.net/10203/148287 | - |
dc.language | ENG | - |
dc.title | Origin of PL intensity increase of CaMgSi2O6:Eu2+ phosphor after baking process for PDPs application | - |
dc.type | Conference | - |
dc.type.rims | CONF | - |
dc.citation.publicationname | Kyoto Joint Symposium | - |
dc.identifier.conferencecountry | Japan | - |
dc.identifier.conferencecountry | Japan | - |
dc.contributor.localauthor | Jeon, DukYoung | - |
dc.contributor.nonIdAuthor | Im, WB | - |
dc.contributor.nonIdAuthor | Kang, JH | - |
dc.contributor.nonIdAuthor | Lee, DC | - |
dc.contributor.nonIdAuthor | Lee, S | - |
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