DC Field | Value | Language |
---|---|---|
dc.contributor.author | Sridharan, M | ko |
dc.contributor.author | Narayandass, SK | ko |
dc.contributor.author | Mangalaraj, D | ko |
dc.contributor.author | Lee, Hee Chul | ko |
dc.date.accessioned | 2009-12-14T06:26:29Z | - |
dc.date.available | 2009-12-14T06:26:29Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2003-04 | - |
dc.identifier.citation | VACUUM, v.70, pp.511 - 522 | - |
dc.identifier.issn | 0042-207X | - |
dc.identifier.uri | http://hdl.handle.net/10203/14810 | - |
dc.description.abstract | Polycrystalline Cd0.96Zn0.04Te thin films are deposited onto glass substrates (Corning 7059) kept at room temperature by vacuum evaporation. The films exhibit zinc blende structure with predominant (111) orientation. The rms roughness of the films evaluated by atomic force microscope is 3.7 nm. The band gap energy of the films measured by optical transmittance measurement is 1.539eV. The photoluminescence (PL) spectrum of the films shows intense emission due to free and bound exciton recombination and no emission associated with crystal imperfection and PL line shapes give indications of the high quality of the layers. These films have been implanted with properly mass analyzed Boron ions (B-10(+)) and the effect of implantation has been analyzed by X-ray diffraction, Raman scattering and optical transmittance measurements and the results are explained on the basis of the implantation induced surface roughness and lattice disorder. (C) 2003 Elsevier Science Ltd. All rights reserved. | - |
dc.language | English | - |
dc.language.iso | en_US | en |
dc.publisher | PERGAMON-ELSEVIER SCIENCE LTD | - |
dc.subject | ION-IMPLANTATION DAMAGE | - |
dc.subject | RAMAN-SCATTERING | - |
dc.subject | OPTICAL-ABSORPTION | - |
dc.subject | CADMIUM TELLURIDE | - |
dc.subject | CDTE | - |
dc.subject | SPECTRA | - |
dc.subject | CDZNTE | - |
dc.subject | PHOTOLUMINESCENCE | - |
dc.subject | GAAS | - |
dc.subject | SEMICONDUCTORS | - |
dc.title | Studies on polycrystalline Cd0.96Zn0.04Te thin films prepared by vacuum evaporation | - |
dc.type | Article | - |
dc.identifier.wosid | 000181956100006 | - |
dc.identifier.scopusid | 2-s2.0-0037418709 | - |
dc.type.rims | ART | - |
dc.citation.volume | 70 | - |
dc.citation.beginningpage | 511 | - |
dc.citation.endingpage | 522 | - |
dc.citation.publicationname | VACUUM | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Lee, Hee Chul | - |
dc.contributor.nonIdAuthor | Sridharan, M | - |
dc.contributor.nonIdAuthor | Narayandass, SK | - |
dc.contributor.nonIdAuthor | Mangalaraj, D | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Cd0.96Zn0.04Te films | - |
dc.subject.keywordAuthor | XRD | - |
dc.subject.keywordAuthor | photoluminescence | - |
dc.subject.keywordAuthor | B-10(+) implantation | - |
dc.subject.keywordAuthor | Raman scattering | - |
dc.subject.keywordAuthor | optical properties | - |
dc.subject.keywordPlus | ION-IMPLANTATION DAMAGE | - |
dc.subject.keywordPlus | RAMAN-SCATTERING | - |
dc.subject.keywordPlus | OPTICAL-ABSORPTION | - |
dc.subject.keywordPlus | CADMIUM TELLURIDE | - |
dc.subject.keywordPlus | CDTE | - |
dc.subject.keywordPlus | SPECTRA | - |
dc.subject.keywordPlus | CDZNTE | - |
dc.subject.keywordPlus | PHOTOLUMINESCENCE | - |
dc.subject.keywordPlus | GAAS | - |
dc.subject.keywordPlus | SEMICONDUCTORS | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.