The impact of Si impurities in HfO2
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kim, DY | - |
| dc.contributor.author | Kang, J | - |
| dc.contributor.author | Chang, Kee-Joo | - |
| dc.date.accessioned | 2013-03-18T11:43:28Z | - |
| dc.date.available | 2013-03-18T11:43:28Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 2005-12 | - |
| dc.identifier.citation | The International Conference on Advanced Materials and Devices, v., no., pp. - | - |
| dc.identifier.uri | http://hdl.handle.net/10203/148080 | - |
| dc.language | ENG | - |
| dc.publisher | ICAMD | - |
| dc.title | The impact of Si impurities in HfO2 | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.publicationname | The International Conference on Advanced Materials and Devices | - |
| dc.identifier.conferencecountry | South Korea | - |
| dc.identifier.conferencecountry | South Korea | - |
| dc.contributor.localauthor | Chang, Kee-Joo | - |
| dc.contributor.nonIdAuthor | Kim, DY | - |
| dc.contributor.nonIdAuthor | Kang, J | - |
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