Enhancement of the steady state minority carrier lifetime in HgCdTe photodiode using ECR plasma hydrogenation

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This paper reports the effects of electron cyclotron resonance (ECR)H-2 plasma hydrogenation on the characteristics of HgCdTe devices for the first time. We compared the characteristics of photodiodes and n-channel enhancement type field effect transistors (FETs) in the hydrogenated regions with those in the unhydrogenated regions on the same wafer. From the measurement of the photodiodes, it was found that the steady-state minority carrier diffusion length was increased from 19 to 28 mu m by the hydrogenation. The surface mobility of the n-channel FET was about 5800 cm(2)/Vs and was not varied by hydrogenation. From these facts, the steady-state minority carrier lifetime is increased about two times by the ECR H, plasma hydrogenation. We believe that the ECR hydrogenation can effectively reduce the surface trap-states which results in increasing the minority carrier lifetime and improving the characteristics of HgCdTe devices.
Publisher
MINERALS METALS MATERIALS SOC
Issue Date
1996-08
Language
English
Article Type
Article; Proceedings Paper
Keywords

RECOMBINATION; ILLUMINATION; HG1-XCDXTE; REDUCTION

Citation

JOURNAL OF ELECTRONIC MATERIALS, v.25, no.8, pp.1266 - 1269

ISSN
0361-5235
URI
http://hdl.handle.net/10203/14800
Appears in Collection
EE-Journal Papers(저널논문)
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